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Volume 7, Issue 1 (2016) , Pages [1] - [60]
INTERSTITIAL DIFFUSION OF ARSENIC IN SILICON
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[2] A. Martinez-Limia, P. Pichler, C. Steen, S. Paul and W. Lerch, Modeling of the diffusion and activation of arsenic in silicon including clustering and precipitation, Solid State Phenom. 131-133 (2008), 277-282.
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[6] P. Lévêque, H. K. Nielsen, P. Pellegrino, A. Hallén, B. G. Svensson, A. Yu. Kuznetsov, J. Wong-Leung, C. Jagadish and V. Privitera, Vacancy and interstitial depth profiles in ion-implanted silicon, J. Appl. Phys. 93(2) (2003), 871-877. doi:10.1063/1.1528304
[7] S. Solmi, Dopants in silicon: Activation and deactivation kinetics, in: “Encyclopedia of Materials: Science and Technology”, edited by K. H. J. Buschow, R. W. Cahn, M. C. Flemings, B. Ilschner, E. J. Kramer, S. Mahajan and P. Veyssiére (Elsevier Science Ltd., 2001), 2331-2340.
[8] O. I. Velichko and N. A. Sobolevskaya, Analytical solution of the equations describing interstitial migration of impurity atoms, Nonlinear Phenom. Complex Syst. 14(1) (2011), 70-79.
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http://dx.doi.org/10.1103/PhysRev.104.617
[12] O. I. Velichko, Narushenie uclovija lokalnogo termodinamicheckogo ravnovecija pri b’ictr’ih termicheckih otjigah ionno-implantirovannogo kremnija (Violation of the condition of local thermodynamic equilibrium on rapid thermal annealing of ion-implanted silicon) Radiotekhnika i Elektronika (Radioengineering and Electronics) Republican interdepartmental volume of papers,
[13] O. I. Velichko, Mechanism of locally enhanced diffusion of impurities under condition of high concentration doping of silicon with phosphorus, Elektronnaya tehnika. Ser. 2, Poluprovodnikovie pribory (Electronic Engineering, Part 2, Semiconductor Devices), 2(187) (1987), 57-63 (in Russian).