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In the present study, thermoelectric materials based on p-type  and dispersed with x compositions of selenium (Se)  in  ingots were prepared by using standard solid-state microwave synthesis procedures. The microstructures of the ingots were characterized by field emission scanning electron microscopy. The crystalline of the powders were examined by X-ray diffraction, which showed the formation of a rhombohedral structure. The electrical transport properties of the samples were studied from room temperature up to 500K. The results indicate that the hole concentration gradually increases, resulting in an increase in electrical conductivity and a decrease in the Seebeck coefficient with increasing Se content. The thermoelectric power factor was enhanced to  for the sample with  

chalcogenides, inorganic compounds, X-ray diffraction, electrical properties.